Carrier Transport on p^+-v Junction Based on Relaxation Semiconductors. I. Theory
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A general theory for both transient and steady state carrier transport in p^+-v junctions, based on relaxation semiconductors, has been developed by taking into account the space-charge doublet in the vicinity of the junction. A model with two trapping levels of different time constants (TTL model) helps to elucidate the relationship between the relaxation and the space charge limited current (SCLC) regimes. The transport theory of p^+-v junctions consisting of a space-charge distribution with three regions of different densities predicts that the existence of the depletion region is responsible for the extended linear region observed in the steady forward characteristic. The present theory is applicable to a variety of high-resistivity materials and p-n junctions including, amorphous semiconductors.
- 社団法人応用物理学会の論文
- 1979-04-05
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