DLTS Measurement on Au-Doped Si p^+n Junctions and Its Computer Simulation
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DLTS (Deep Level Transient Spectroscopy) measurement and its computer simulation have been performed in order to obtain further information on Au in Si and to make a detailed study of the DLTS signals. We have analyzed the general case where the capacitance change caused by the pulse application has an arbitrary magnitude. It is found that: i) the signal peak positions of the experiment and the simulation agree fairly well; ii) the occupation rate at the deep level before and after the pulse must be taken into account to estimate its concentration; and iii) exact values of injected carrier concentrations and/or degeneracy factors are needed for the precise analysis of the signals under infection pulses. A hole trap near the midgap and a signal peak due to Au atoms in the p^+-side depletion region have been observed experimentally.
- 社団法人応用物理学会の論文
- 1980-12-05
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