SEM-EBIC Investigations of Semi-Insulating Undoped LEC-GaAs
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Semi-insulating undoped liquid encapsulated Czochralski GaAs is investigated by taking the image of electron beam induced current. It is found that well resolved images of crystal defects are observed by applying a high bias voltage of about 10-50 V to the specimen with a Schottky electrode under an electron beam current of (0.5-5)×10^<-18> A at an accelarating voltage of about 10-20 kV.
- 社団法人応用物理学会の論文
- 1985-05-20
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