Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We have studied the effects of atomic hydrogen(H) generated by a hot tungsten (W) cracking cell upon substrate cleaning and GaN growth by RF-MBE. And we have shown atomic H irradiation during thermal cleaning stage produce a smooth surface, which in turn improves that quality of GaN films. Also confirmed is that atomic H irradiation during GaN growth is efficient to improve the crystal quality. Compared to the PL data of as-grown samples, the annealed samples didn't show degradation of optical quality. From these, it can be considered that the possibility of hydrogen passivation is small. We consider that atomic H irradiation in N-rich GaN growth suppresses 3-D growth and enhances 2-D growth, though the atomic-scale mechanisms and interaction of atomic H irradiation on GaN growth is not totally clear at present.
- 社団法人応用物理学会の論文
- 1998-10-01
著者
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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OKADA Yoshitaka
Institute of Applied Physics. University of Tsukuba
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Univ. Tsukuba Ibaraki Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
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OKAMOTO Yoshihiro
Institute of Applied Physics, University of Tsukuba
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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Okada Yasumasa
Electrotechnical Laboratory
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HASHIGUCHI Shinji
Institute of Materials Science, University of Tsukuba
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Hashiguchi S
Kyoto Inst. Technol. Kyoto Jpn
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