Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching
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概要
- 論文の詳細を見る
Solid-phase crystallization of amorphous Si (a-Si) films was found to be enhanced by oxygen- or nitrogen-plasma treatment prior to annealing for crystallization using a reactive ton etching system. Amorphous Si films were deposited by vacuum evaporation under ultrahigh-vacuum conditions. Plasma treatments were carried out using a conventional parallel-plate reactive ton etching apparatus. The incubation time for crystallization of a-Si was found to be greatly reduced by plasma treatment. Nitrogen-plasma treatment resulted in more enhanced crystallization than oxygen plasma. The incubation time was found to decrease with the increase of the self-bias voltage of the reactive ion etching system during plasma treatment. Impurity analysis suggests that metal atoms adsorbed during treatment at the surface of a-Si is one cause of the enhanced crystallization.
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Univ. Tsukuba Ibaraki Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Okada Yasumasa
Electrotechnical Laboratory
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Aoto Koji
Center For Microelectronic Systems Kyushu Institute Of Technology
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AOTO Katsuhide
Center for Microelectronic Systems, Kyushu Institute of Technology
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OKADA Yoshihiro
Center for Microelectronic Systems, Kyushu Institute of Technology
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