Behavior of Plated Microbumps during Ultrasonic Flip-Chip Bonding Determined from Dynamic Strain Measurement
スポンサーリンク
概要
- 論文の詳細を見る
The dynamic strain generated under a Au plated microbump during ultrasonic flip-chip bonding has been measured using a Si thin-film strain gauge array to investigate its bonding behavior. The gauges were designed to be sensitive to the strain in both the horizontal and vertical directions. Measured results reveal that plated microbump bonds with a small deformation of the bump surface produced by friction. A comparative study between large bumps and microbumps was also carried out. The bonding behavior of plated microbumps has been found to be the same as that of the plated large bumps while it is different from that of ball bumps. In the case of the ball bumps, the flat contact region between the bumps and bonding pad at the initial stage of bonding is small because the bump surface is spherical. Hence, the expansion of this contact region (large deformation) is necessary for bonding of the bumps. On the other hand, in the case of the plated microbumps, the flat contact region between the bumps and bonding pad is large even at the initial stage of bonding. Hence, bonding is performed with a small deformation of the bump surface produced by friction. The difference in bonding behavior due to the bump shape can clearly explain why plated microbump bonds when a smaller pressure was applied during ultrasonic application than the pressure required for bonding of the ball bumps.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
-
Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
-
Watanabe Naoya
Center For Microelectronic Systems Kyushu Institute Of Technology
関連論文
- Ion Beam Modification of a Photoresist and Its Application to Field Emitters
- Field Emission from an Jon Irradiated Photoresist
- D315 A NOVEL FLUIDIC MICROMOTOR DRIVEN BY THERMOCAPILLARY FORCE(Micro-scale phenomena)
- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
- SOI-MOSFET/Diode Composite Photodetection Device
- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
- Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films
- Field Electron Emission from Inkjet-Printed Carbon Black
- Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars
- Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
- Suppressing Plasma Induced Degradation of Gate Oxide Using Silicon-on-Insulator Structures
- Suppressing Plasma Induced Degradation of Gate Oxide by Using Silicon-On-Insulator Structures
- Reduction of Charge Build-up during Reactive Ion Etching by Using SOI Structures
- Variation of Photoluminescence Properties of Stain-Etched Si with Crystallinity of Starting Polycrystalline Si Films
- Ion Beam Modified Photoresist : A New Class of Field Emitter Material for Large Area Devices (Special Issue on Electronic Displays)
- Connection Test of Area Bump Using Active-Matrix Switches
- Connection Test of Area Bump Using Active-Matrix Switches
- Dynamic Strain and Chip Damage during Ultrasonic Flip Chip Bonding
- Dynamic Strain and Its Distribution during Ultrasonic Flip Chip Bonding
- CMOS Application of Single-Grain Thin Film Transistor Produced Using Metal Imprint Technology
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- Joule Heating of Field Emitter Tip Fabricated on Glass Substrate
- Influence of Direct Au-Bump Formation on Metal Oxide Semiconductor Field Effect Transistor
- Behavior of Plated Microbumps during Ultrasonic Flip-Chip Bounding Determined from Dynamic Strain Measurement
- Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition(Thin Film Transistors, Fundamental and Application of Advanced Semiconductor Devices)
- Physical Random-Number Generator Using Schottky MOSFET
- Physical Random-Number Generator Using Schottky MOSFET
- Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET
- Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
- Monitoring of Two-Dimensional Plasma Uniformity with Electrostatic Probing of Oxidized Wafer Surface : Semiconductors
- Imprint Lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transisor Fabrication
- Fabrication of Single-Crystal Silicon Field Emitter Array on Glass Substrate
- Measurement of Dynamic Strain during Ultrasonic Au Bump Formation on Si Chip
- New SOI Complementary-Bipolar Complementary-MOS(CBiCMOS)with Merged Device Structure
- A New Merged Bipolar-MOS Transistor in a Silicon on Insulator Structure
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Microheater-Driven Dancing Microbubble
- Easy Release of Mold in Imprint Lithography Using Ion-Beam-Irradiated Photoresist Surface
- Fabrication of Carbon-Based Field Emitters Using Stamp Technology
- A New Merged BiMOS Transistor in an SOI Structure
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching
- Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma Treatment
- Control of Si Solid Phase Nucleation by Surface Steps for High-Performance Thin-Film Transistors
- Si Field Emitter Arrays Fabricated by Anodization and Transfer Technique
- Gas Species Dependent Charge Build-Up in Reactive Ion Etching
- Synthesis and Electrical Properties of Phosphorus-Doped Homoepitaxial Diamond (111) by Microwave Plasma-Assisted Chemical Vapor Deposition Using Triethylphosphine as a Dopant Source
- Reduction of Charge Build-Up during Reactive Ion Etching by Using Silicon-On-Insulator Structures
- Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Fabrication of Field Emitter Arrays Using Si Delamination by Hydrogen Ion Implantation
- Fabrication of Microcantilever with a Silicon Tip Prepared by Anodization
- Field Emission from an Ion-Beam-Modified Polyimide Film
- A New Self-Aligned Process for Fabrication of Microemiter Arrays Using Selective Etching of Silicon
- Fabrication of Single-Crystal Si Microstructures by Anodization
- CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device
- Influence on Electrical Characteristic of Direct Au-Bumping on MOSFET
- Wafer-level Fabrication of Compliant Bump
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Measurement of Dynamic Strain during Ultrasonic Au-Bumping on Si Chip
- Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOI
- SOI-MOS/Diode Composite Photodetector Device
- New SOI-CBiCMOS with Merged Device Structure
- Reduction of the Floating-Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Characteristics of Thin-Film Transistors Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps
- Dynamic Strain and Chip Damage during Ultrasonic Flip Chip Bonding
- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
- Field Electron Emission from Inkjet-Printed Carbon Black
- Connection Test of Area Bump Using Active-Matrix Switches
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
- CMOS Application of Single-Grain Thin Film Transistor Produced Using Metal Imprint Technology
- SOI-MOSFET/Diode Composite Photodetection Device
- Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing
- Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET
- Cross-Hatch Related Oxidation and Its Impact on Performance of Strained-Si MOSFETs
- CMOS Application of Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
- Fabrication of a Gated Cold Cathode Using the Inkjet Embedding Method
- Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
- Behavior of Plated Microbumps during Ultrasonic Flip-Chip Bonding Determined from Dynamic Strain Measurement
- Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars
- Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
- Location Control of Si Thin-Film Grain Using Ni Imprint and Excimer Laser Annealing