Fabrication of Single-Crystal Si Microstructures by Anodization
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概要
- 論文の詳細を見る
We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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Higa Katsuya
Center For Microelectronic Systems Kyushu Institute Of Technology
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