Gas Species Dependent Charge Build-Up in Reactive Ion Etching
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概要
- 論文の詳細を見る
The effects of gas species on the charge build-up in reactive ion etching (RIE) have been investigated. The charge build-up was evaluated using metal/nitride/oxide/silicon (MNOS) capacitors and metal/oxide/silicon (MOS) capacitors. It was found that etching with electronegative gases such as O_2 and CF_4 results in considerable charge build-up. The spatial distribution of plasma parameters was diagnosed using a Langmuir probe. It was found that the spatial distribution of plasma parameters is non-uniform in plasmas of negative gases,while it is uniform in H_2, He, Ar, and Xe gas plasmas. The results suggest that we must take the effect of the gas species into consideration for the nonuniformity in a plasma, which causes the significant charge build-up. Models that can be used to explain the effect of gas species are discussed. It was also found that the charge build-up can be drastically reduced by adding H_2 gas to negative gases.
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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Arita Kiyoshi
Center For Microelectronic Systems Kyushu Institute Of Technology
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