Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing
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概要
- 論文の詳細を見る
A new technique of controlling the location and orientation of Si grain by combining metal-induced lateral crystallization (MILC) and excimer laser annealing (ELA) is proposed. A starting amorphous Si (a-Si) film is deposited on a SiO2 substrate having shallow pits. MILC is used to crystallize the a-Si film in a highly oriented polycrystal. ELA is used to recrystallize the highly oriented polycrystalline Si film. ELA produces large Si grains at the shallow pit sites because temperature gradient is generated by slanting Si surface on the slope of the pit. Si grains whose size is approximately 1.6 μm were formed at the pit sites. Electron backscatter diffraction pattern (EBSP) analysis showed that the crystal orientation aligned over the grain boundary.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-30
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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Nakagawa Gou
Center For Microelectronic Systems Kyushu Institute Of Technology
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Miyasaka Mitsutoshi
Advanced Product Development Department
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Stoemenos John
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
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Higashi Naoyuki
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4, Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Nakagawa Gou
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4, Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Miyasaka Mitsutoshi
Advanced Product Development Center, Seiko Epson Corporation, 281 Fujimi, Suwa, Nagano 399-0293, Japan
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