Requirements for thin film transistor circuit on plastic (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
- 論文の詳細を見る
The self-heating effect of thin film transistors (TFTs) is a serious problem when the TFT circuits are formed on a plastic film, since plastic films generally possess low thermal conductivity values, preventing the efficient dissipation of heat. In addition, the glass transition temperature of plastic films is roughly between 100℃ and 200℃ and, thus, the self-heating effect of a TFT needs to be more strictly controlled on a plastic film than that on a glass substrate. This paper presents four methods for controlling the self-heating effect through TFT shape, TFT electrical performance, dimensional reductions and low-power, energy-efficient circuits. A combination of these methods will be essential for realizing the system-on-panel concept on plastic.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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INOUE Satoshi
Frontier Device Research Center, Seiko Epson Corporation
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HARA Hiroyuki
Seiko Epson Corporation
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Izumi S
Division Of Oral Cytology And Cell Biology Nagasaki University Graduate School Of Biomedical Science
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Karaki Nobuo
Frontier Device Research Center Seiko Epson Corporation
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Hara Hiroyuki
Frontier Device Research Center Seiko Epson Corporation
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Miyasaka Mitsutoshi
Advanced Product Development Department
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Karaki Nobuo
Seiko Epson Corp. Nagano‐ken Jpn
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Miyasaka Mitsutoshi
Advanced Product Development Center, Seiko Epson Corporation, 281 Fujimi, Suwa, Nagano 399-0293, Japan
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Inoue Satoshi
Frontier Device Research Center Seiko Epson Corporation
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