Evaluation of Thin-Film Photodiodes and Development of Thin-Film Phototransistor

概要

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First, a p/i/n thin-film photodiode (TFPD) is evaluated, and it is found that the photoinduced current ($I_{\text{photo}}$) is relatively large. Next, a p/n TFPD is evaluated, and it is found that the $I_{\text{photo}}$ is independent of the applied voltage ($V_{\text{apply}}$). However, it is difficult to simultaneously achieve a large and independent $I_{\text{photo}}$. Therefore, a p/i/n thin-film phototransistor (TFPT) is developed, and it is found that the $I_{\text{photo}}$ can be both relatively large and independent of the $V_{\text{apply}}$ by optimizing the gate voltage. These characteristics are obtained because the depletion layer is formed in the entire intrinsic region and the electric field is always high. It is expected that these characteristics are preferable for some types of photosensor application such as artificial retina.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-03-25