Extraction Technique of Trap Densities in Thin Films and at Insulator Interfaces of Thin-Film Transistors
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We have developed an extraction technique of trap densities in thin films and at insulator interfaces of thin-film transistors (TFTs). These trap densities can be extracted and separated from capacitance--voltage ($C$--$V$) and current--voltage ($I$--$V$) characteristics by numerically calculating $Q = CV$, Poisson equation, carrier density equations, and Gauss's law. The trap densities in the upper and lower halves of the band gap are extracted from n- and p-type TFTs, respectively. The outstanding advantages are intuitive understandability and a simple algorithm. Actual trap densities are extracted for high-temperature polycrystalline silicon (poly-Si) TFTs.
- 2011-03-25
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