Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator
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概要
- 論文の詳細を見る
The positive bias instabilities of the zinc oxide thin-film transistors (ZnO TFTs) with a SiOx/SiNx-stacked gate insulator have been investigated. The film quality of a gate insulator of SiOx, which forms an interface with the ZnO channel, was varied by changing the gas mixture ratio of SiH4/N2O/N2 during plasma-enhanced chemical vapor deposition. The positive bias stress endurance of ZnO TFT strongly depended on the deposition condition of the SiOx gate insulator. From the relaxations of the transfer curve shift after imposition of positive bias stress, transfer curves could not be recovered completely without any thermal annealing. A charge trapping in a gate insulator rather than that in bulk ZnO and its interface with a gate insulator is a dominant instability mechanism of ZnO TFTs under positive bias stress.
- 2011-03-25
著者
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Furuta Mamoru
Research Institute For Nano-devices Kochi University Of Technology
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HIRAO Takashi
Research Institute, Kochi University of Technology
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HIRAMATSU Takahiro
Research Institute for Nano-devices, Kochi University of Technology
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Li Chaoyang
Research Institute For Nano-devices Kochi University Of Technology
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Fujita Shizuo
Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
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Kimura Mutsumi
Department of Chemistry, Graduate School of Natural Science and Technology, Okayama University
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Kamada Yudai
Graduated School of Engineering, Kyoto University, Kyoto 615-8520, Japan
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Li Chaoyang
Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Hirao Takashi
Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Fujita Shizuo
Graduated School of Engineering, Kyoto University, Kyoto 615-8520, Japan
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