Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on $\beta$-Ga2O3 Substrates
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概要
- 論文の詳細を見る
A vertical-type Schottky photodetector based on a (100)-oriented $\beta$-Ga2O3 substrate has been fabricated with simple processes of thermal annealing and vacuum evaporation. The photodetector exhibited a rectification ratio higher than $10^{6}$ at $\pm 3$ V, and showed deep-ultraviolet-light detection at reverse bias. The spectral response showed solar-blind sensitivity with high photoresponsivities of 2.6--8.7 A/W at wavelengths of 200--260 nm. These values were 35--150 times higher than those derived assuming the internal quantum efficiency to be unity. This fact is attributed to the carrier multiplication occurring in the highly resistive surface region that is subject to a high internal electric field of about 1.0 MV/cm at the reverse bias of 10 V.
- Japan Society of Applied Physicsの論文
- 2008-01-25
著者
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Suzuki Norihito
Nippon Light Metal Company Ltd.
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Arai Naoki
Nippon Light Metal Company Ltd.
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Fujita Shizuo
Kyoto Univ. Kyoto Jpn
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Oshima Takayoshi
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-
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Okuno Takeya
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-
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Ohira Shigeo
Nippon Light Metal Company, Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Fujita Shizuo
Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
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Okuno Takeya
Department Of Electronic Science And Engineering Kyoto University
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Ohira Shigeo
Nippon Light Metal Company Ltd.
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Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
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