Heteroepitaxy of Corundum-Structured $\alpha$-Ga2O3 Thin Films on $\alpha$-Al2O3 Substrates by Ultrasonic Mist Chemical Vapor Deposition

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概要

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• Ga2O3 thin films of the $\alpha$-phase, that is, the corundum structure (in the trigonal system), have been epitaxially obtained on sapphire ($\alpha$-Al2O3) substrates, in contrast to the strong tendency of Ga2O3 to assume a heterogeneous crystal structure, that is, the $\beta$-gallia structure (in the monoclinic system) on sapphire. This result is advantageous for high-quality films and is due to the growth by mist chemical vapor deposition (CVD) at low temperatures of 430–470 °C. The $\alpha$-Ga2O3 films have narrow full-widths at half maximum (FWHMs) in their X-ray diffraction rocking curves, for example, about 60 arcsec. The root mean square (RMS) roughness of the surface was as small as 1 nm. The optical band gap energy obtained was 5.3 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The epitaxial growth of $\alpha$-Ga2O3 films on sapphire is beneficial for the fabrication of oxide optical and electronic devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-09-25

著者

• Fujita Shizuo

  Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan

• Shinohara Daisuke

  Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan

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• Heteroepitaxy of Corundum-Structured $\alpha$-Ga2O3 Thin Films on $\alpha$-Al2O3 Substrates by Ultrasonic Mist Chemical Vapor Deposition

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