Photocurrent and Persistent Photoconductivity in Zinc Oxide Thin-Film Transistors under Ultraviolet-Light Irradiation
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概要
- 論文の詳細を見る
The photocurrent and photoconductive decay of the bottom-gate zinc oxide thin-film transistors (ZnO TFTs) under ultraviolet (UV) light irradiation were investigated. A light-shield was formed on the TFTs to generate photoexcited carriers in a limited portion of the channel. It was found that the UV-light irradiated portion in the channel influenced not only the photocurrent but also the photoconductive decay of the ZnO TFTs. On the basis of the experimental and device simulation results, it is safe to say that the positive charges accumulated near the source region play a key role in determining both the photocurrent and photoconductive decay of the ZnO TFTs.
- 2011-11-25
著者
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Fujita Shizuo
Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
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Wang Dapeng
Institute Of Radiation Medicine Chinese Academy Of Medical Sciences And Peking Union Medical College
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Kimura Mutsumi
Department of Chemistry, Graduate School of Natural Science and Technology, Okayama University
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Kimura Mutsumi
Department of Electronics and Informatics, Ryukoku University, Otsu 520-2194, Japan
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Kamada Yudai
Graduated School of Engineering, Kyoto University, Kyoto 615-8520, Japan
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Furuta Mamoru
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Shimakawa Shin-ichi
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Kawaharamura Toshiyuki
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Li Chaoyang
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Hirao Takashi
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Wang Dapeng
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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