Extraction Technique of Trap Density at Grain Boundaries in Polycrystalline-Silicon Thin-Film Transistors with Device Simulation
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概要
- 論文の詳細を見る
An extraction technique of trap density at grain boundaries ($D_{\text{gb}}$) in polycrystalline-silicon thin-film transistors with two-dimensional (2D) device simulation has been developed. The energy profile of $D_{\text{gb}}$ can be extracted by repeatedly fitting a simulated current–voltage ($I$–$V$) characteristic to a measured $I$–$V$ characteristic with the consideration of potential barriers at grain boundaries. Particularly in this study, the actual dependence of the energy profile of $D_{\text{gb}}$ on the irradiated energy during excimer laser crystallization ($F_{\text{x}}$) is analyzed by varying $F_{\text{x}}=410$, 420, and 430 mJ$\cdot$cm-2. It is found that $D_{\text{gb}}$ definitely depends on $F_{\text{x}}$, whereas trap density at an oxide interface slightly depends on $F_{\text{x}}$. This is because the grain boundaries are formed during the excimer laser crystallization and not exposed to subsequent fabrication processes. This discussion becomes possible for the first time by precise extraction using the extraction technique with the 2D device simulation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-30
著者
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KIMURA Mutsumi
Department of Electronics and Informatics, Ryukoku University
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INOUE Satoshi
Frontier Device Research Center, Seiko Epson Corporation
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SHIMODA Tatsuya
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology
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Abe Daisuke
Frontier Device Research Center Seiko Epson Corporation
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Yasuhara Tohru
Department Of Electronics And Informatics Ryukoku University
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Harada Kiyoshi
Department Of Electronics And Informatics Ryukoku University
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Yoshino Takuto
Department Of Electronics And Informatics Ryukoku University
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Abe Daisuke
Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan
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Kimura Mutsumi
Department of Chemistry, Graduate School of Natural Science and Technology, Okayama University
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Harada Kiyoshi
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan
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Yoshino Takuto
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan
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Shimoda Tatsuya
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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