High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by μ-Czochralski Process(<Special Section>Electronic Displays)

スポンサーリンク

概要

• 論文の詳細を見る

• Location control of grains by μ-Czochralski process with excimer-laser is a powerful tool for realizing high performance singlecrystalline Si TFTs (c-Si TFTs). This study reports the behavior of p-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by μ-Czochralski method. Self-aligned p-channel single-crystalline Si TFTs is fabricated with a top gate structure having ECR-PECVD SiO_2 as gate insulator. The field effect hole mobility of 250 cm^2/Vs and subthreshold swing of 0.29 V/dec. are obtained successfully. Effects of active Si thickness and boron channel doping on the characteristics of the c-Si TFTs were studied.

• 社団法人電子情報通信学会の論文
• 2004-11-01

著者

• 井上 聡

  セイコーエプソン株式会社フロンティアデバイス研究所

• 下田 達也

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology

• INOUE Satoshi

  Seiko Epson Corporation

• SHIMODA Tatsuya

  Seiko Epson Corporation

• RANA Vikas

  Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology

• ISHIHARA Ryoichi

  Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology

• HIROSHIMA Yasushi

  Technology Platform Research Center, Seiko Epson Cooperation

• ABE Daisuke

  Technology Platform Research Center, Seiko Epson Cooperation

• INOUE Satoshi

  Technology Platform Research Center, Seiko Epson Cooperation

• SHIMODA Tatsuya

  Technology Platform Research Center, Seiko Epson Cooperation

• METSELAAR Wim

  Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology

• BEENAKKER Kees

  Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology

• Abe Daisuke

  Frontier Device Research Center Seiko Epson Corporation

• Metselaar Wim

  Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron

• Shimoda Tatsuya

  Seiko Epson Corp. Nagano Jpn

• Beenakker Kees

  Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron

• Rana Vikas

  Delft Institute Of Microelectronics And Submicron Technology (dimes) Delft University Of Technology

• Inoue S

  Frontier Device Research Center Seiko Epson Corporation

• Shimoda Tatsuya

  Technology Platform Research Center Seiko Epson Corp.

• Inoue S

  Seiko Epson Corporation

• Izumi S

  Division Of Oral Cytology And Cell Biology Nagasaki University Graduate School Of Biomedical Science

• Ishihara R

  Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron

• 下田 達也

  Seiko Epson Corporation

• Hiroshima Y

  Technology Platform Research Center Seiko Epson Cooperation

関連論文

• Poly-Si TFTを用いたデバイスレベルのニューラルネットワーク(シリコン関連材料の作製と評価)
• ACT-2-8 フレキシブル・マイクロエレクトロニクスを実現する非同期回路設計(ACT-2.低侵襲医療診断・治療を実現するエレクトロニクス技術,チュートリアル講演,ソサイエティ企画)
• ツボの選択を目的とした負荷動作のweb用三次元CGの開発
• [招待論文]Cat-CVD a-Si:H膜のレーザアニール特性とpoly-Si TFTの作製(有機ELとTFT(シリコン、化合物、有機)及びディスプレイ技術)
• インクジェット成膜 : 微小液滴の挙動
• インクジェット有機薄膜 (特集 有機エレクトロニクスの新展開)
• Extraction Technique of Trap Density at Grain Boundaries in Polycrystalline-Silicon Thin-Film Transistors with Device Simulation
• High-Performance Polyclystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process
• Classification of Driving Methods for TFT-OLEDs and Novel Proposal Using Time Ratio Grayscale and Current Uniformization(Electronic Displays)
• マイクロ液体から直接に薄膜デバイスを形成する技術-マイクロ液体プロセス- : 2. 無機薄膜への適用と興味ある応用
• マイクロ液体から直接に薄膜デバイスを形成する技術-マイクロ液体プロセス- : 1. マイクロ液体プロセスの概要と有機デバイスへの適用
• High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by μ-Czochralski Process(Electronic Displays)
• 表側と裏側の絶縁膜界面にトラップ準位をもつポリシリコン薄膜トランジスタのデバイスシミュレーション(ディスプレイ-IDW'03関連-)
• インクジェット印刷法による有機半導体形成(新しいパターン形成における材料・プロセス技術)
• Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
• Poly-Si TFT特性の酸化膜界面トラップと結晶粒界トラップに対する依存性およびその製造プロセス診断への応用(半導体Si及び関連材料・評価)
• High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition
• マイクロ液体プロセスを用いた電子デバイス(フラットパネルディスプレイの製造技術)
• [招待論文]Cat-CVD a-Si:H膜のレーザアニール特性とpoly-Si TFTの作製(有機ELとTFT(シリコン,化合物,有機)及びディスプレイ技術)
• [招待論文]Cat-CVD a-Si:H膜のレーザアニール特性とpoly-Si TFTの作製(有機ELとTFT(シリコン、化合物、有機)及びディスプレイ技術)
• Numerical Model of Thin-Film Transistors for Circuit Simulation Using Spline Interpolation with Transformation by y=x + log(x)(Regular Section)
• 多結晶シリコン薄膜トランジスタの絶縁膜-シリコン界面と結晶粒界のトラップ準位の抽出(低温または高温多結晶Siとアクティブマトリックス型ディスプレイ用薄膜トランジスタ論文特集)
• Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
• Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
• Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density
• 多結晶シリコン薄膜トランジスタの特性解析とシミュレーション
• 多結晶シリコン薄膜トランジスタの特性解析とシミュレーション
• SC-8-13 TFTの高性能化とその応用
• 低温多結晶シリコン薄膜トランジスタ駆動発光ポリマーディスプレイ
• Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors
• Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors : Semiconductors
• Novel Si Codoped Pb(Zr, Ti, Nb)O_3 Thin Film for High-Density Ferroelectric Random Access Memory
• Preparation of Novel PZTN Thin Film Co-doped Si
• Relationship between Lattice Deformation and Polarization in BaTiO_3
• Electronic States of Perovskite-Type Oxides and Ferroelectricity
• 解説記事 有機トランジスタの進歩
• Fabrication of KNbO_3 Epitaxial Thin Films on Sapphire Substrates by Pulsed Laser Deposition
• Epitaxial Growth of SrRuO_3 Thin Film Electrode on Si by Pulsed Laser Deposition
• Fabrication of Pseudocubic SrRuO_3 (100) Epitaxial Thin Films on Si by Pulsed Laser Deposition : Surfaces, Interfaces, and Films
• Microstructural Investigation of Pulsed-Laser-Deposited SrRuO_3 Films on Si with SrO Buffer Layers : Semiconductors
• Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density : Semiconductors
• Current Paths over Grain Boundaries in Polycrystalline Silicon Films : Semiconductors
• High-Quality SiO_2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor(Semiconductors)
• Micro-shear Bond Strength of Five Single-step Adhesives to Dentin
• Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
• Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors
• Invited Asynchronous Architecture and Its Impact on Low-Power TFT CPUs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Invited Asynchronous Architecture and Its Impact on Low-Power TFT CPUs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• GaInNAs/GaAs Multiple-Quantum-Well Grown by Metalorganic Chemical Vapor Deposition Using Nitrogen Carrier Gas
• Effect of Depth and Tubule Direction on Ultimate Tensile Strength of Human Coronal Dentin
• 30-III-06 Estrogen receptor-associated expression of keratinocyte growth factor and its possible role in the inhibition of the induction of apoptosis in human breast cancer(THE JOINT MEETING OF THE 44TH ANNUAL MEETING OF THE JAPAN SOCIETY OF HISTOCHEMISTR
• ACT-2-8 フレキシブル・マイクロエレクトロニクスを実現する非同期回路設計(ACT-2.低侵襲医療診断・治療を実現するエレクトロニクス技術,チュートリアル講演,ソサイエティ企画)
• TFT-OLEDの駆動方法における突抜誤差の補償方式(薄膜(Si,化合物,有機)機能デバイス・材料・評価技術)
• TFT-OLEDの駆動方法における突抜誤差の補償方式(薄膜(Si,化合物,有機)機能デバイス・材料・評価技術)
• TFT-OLEDの駆動方法における突抜誤差の補償方式(薄膜(Si,化合物,有機)機能デバイス・材料・評価技術)
• フィールド順次カラーTFT-LCDの液晶応答補償のための信号補正
• フィールド順次カラーTFT-LCDの液晶応答補償のための信号補正
• 30-III-05 Involvement of Bcl-2/Bax and Fas/FasL systems in testicular cell apoptosis of estrogenic compound-administered mice(THE JOINT MEETING OF THE 44TH ANNUAL MEETING OF THE JAPAN SOCIETY OF HISTOCHEMISTRY AND CYTOCHEMISTRY AND THE 35TH ANNUAL MEETING
• 30-III-04 Localization of estrogen receptor α and β in endocrine disrupters treated mouse testes(THE JOINT MEETING OF THE 44TH ANNUAL MEETING OF THE JAPAN SOCIETY OF HISTOCHEMISTRY AND CYTOCHEMISTRY AND THE 35TH ANNUAL MEETING OF THE CLINICAL ELECTRON MIC
• Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100℃
• A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors(Electronic Displays)
• Pulse-Width Modulation with Current Uniformization for TFT-OLEDs(Electronic Displays)
• Plasma Oxidation of Silicon and Its Application to Poly-Si TFT Fabrication Process (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• Plasma Oxidation of Silicon and its Application to Poly-Si TFT Fabrication Process
• Device Simulation of grain Boundaries with Oxide-Silicon Interface Roughness in Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors
• 24.4:Investigation of Hot Carrier Degradation Due to AC Stress in Low Temperature Poly-Si TFTs(発表概要)(Report on 2000 SID International Symposium)
• Immunohistochemical localization of the ACTH (MC-2) receptor in the rat placenta and adrenal gland
• Inkjet Printing of Polymeric Field-Effect Transistors and Its Applications
• IA-23 Diethylstilbestrol increases the density of prolactin cells in male mouse pituitary by inducing proliferation of prolactin cells and transdifferentiation of gonadotropic cells(THE 46TH ANNUAL MEETING OF THE JAPAN SOCIETY OF HISTOCHEMISTRY AND CYTOCH
• II-B-05 Effect of diethylstilbestrol upon the kinetics of prolactin and gonadotropic hormone cells through the expression of estrogen receptor α and β in male mouse pituitary(THE 45TH ANNUAL MEETING OF THE JAPAN SOCIETY OF HISTOCHEMISTRY AND CYTOCHEMISTRY
• WS2-4 Optimal conditions for localization of pre-rRNA and its RNA fragments in the nucleolus by electron microscopic in situ hybridization(THE 45TH ANNUAL MEETING OF THE JAPAN SOCIETY OF HISTOCHEMISTRY AND CYTOCHEMISTRY)
• Molecular histochemical analysis of estrogen receptor α and β expressions in the mouse ovary : in situ hybridization and Southwestern histochemistry
• Southwestern histochemistry as a molecular histochemical tool for analysis of expression of transcription factors : application to paraffin-embedded tissue sections
• Micropatterning of SrBi_2Ta_2O_9 Ferroelectric Thin Films Using a Selective Deposition Technique Combined with Patterned Self-Assembled Monolayers and Liquid-Source Misted Chemical Deposition
• High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing
• Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
• Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
• Applications of Pulsed Excimer Laser Deposition with a Frozen Nitrogen Target to Deposition of NbN and BN Films
• Formation of a Frozen Nitrogen Target and Characterization for the Application of Pulsed Laser Deposition
• Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
• Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
• Interaction of Phytoestrogens with Estrogen Receptors α and β(II)
• Differential Analysis of Active and Inactive Genes in Human Neutrophils by Chromosomal In Situ Hybridization
• P2-05 Intranucleolar localization of 18S and 28S rRNAs in mouse Sertoli cells by electron microscopic in situ hybridization
• An Asynchronous Circuit Design Technique for a Flexible 8-Bit Microprocessor
• High Speed Six-Transistor Static Random Access Memory Cells Using Single Grain Thin Film Transistors Fabricated at Low Temperature Process
• Capping Layer on Thin Si Film for $\mu$-Czochralski Process with Excimer Laser Crystallization
• Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
• Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
• High-Performance Polycrystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process
• Extraction Technique of Trap Density at Grain Boundaries in Polycrystalline-Silicon Thin-Film Transistors with Device Simulation
• Time-Ratio Grayscale and Hopping Scan with Current Uniformization for Thin-Film Transistor Driven Organic Light-Emitting Diode Displays
• Artificial Retina Using Thin-Film Photodiodes and Thin-Film Transistors
• Effects of Capping Layer on Grain Growth with $\mu$-Czochralski Process during Excimer Laser Crystallization
• Towards the Integration of Carbon Nanotubes as Vias in Monolithic Three-Dimensional Integrated Circuits
• Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and μ-Czochralski Process
• Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
• High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing
• Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy

もっと見る 閉じる

スポンサーリンク