Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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INOUE Satoshi
Technology Platform Research Center, Seiko Epson Cooperation
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SHIMODA Tatsuya
Technology Platform Research Center, Seiko Epson Cooperation
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Takenaka Satoshi
Displays Operations Division Seiko Epson Corporation
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