INOUE Satoshi | Technology Platform Research Center, Seiko Epson Cooperation
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概要
関連著者
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INOUE Satoshi
Technology Platform Research Center, Seiko Epson Cooperation
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Shimoda Tatsuya
Technology Platform Research Center Seiko Epson Corp.
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SHIMODA Tatsuya
Technology Platform Research Center, Seiko Epson Cooperation
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SHIMODA Tatsuya
Seiko Epson Corporation
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井上 聡
セイコーエプソン株式会社フロンティアデバイス研究所
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下田 達也
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology
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KIMURA Mutsumi
Department of Electronics and Informatics, Ryukoku University
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Inoue S
Seiko Epson Corporation
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Kimura Mutsumi
Department of Chemistry, Graduate School of Natural Science and Technology, Okayama University
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木村 睦
龍谷大学電子情報学科
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木村 睦
Department Of Electronics And Informatics Ryukoku University
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INOUE Satoshi
Seiko Epson Corporation
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ABE Daisuke
Technology Platform Research Center, Seiko Epson Cooperation
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Kimura Mutsumi
Ryukoku University:innovative Materials And Processing Research Center
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Inoue S
Frontier Device Research Center Seiko Epson Corporation
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Kimura Mutsumi
Technology Platform Research Center Seiko Epson Corporation
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Izumi S
Division Of Oral Cytology And Cell Biology Nagasaki University Graduate School Of Biomedical Science
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下田 達也
Seiko Epson Corporation
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KIMURA Mutsumi
Ryukoku University
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ISHIHARA Ryoichi
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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HIROSHIMA Yasushi
Technology Platform Research Center, Seiko Epson Cooperation
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METSELAAR Wim
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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BEENAKKER Kees
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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TAM Simon
Cambridge Research Laboratory of Epson
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KIMURA Mutsumi
Technology Platform Research Center, Seiko Epson Corporation
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Abe Daisuke
Frontier Device Research Center Seiko Epson Corporation
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Shimoda T
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology
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Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
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Karaki Nobuo
Technology Platform Research Center, Seiko Epson Corp.
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Karaki Nobuo
Technology Platform Research Center Seiko Epson Corp.
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Shimoda Tatsuya[
Base Technology Research Center Seiko Epson Corporation
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Takenaka Satoshi
Displays Operations Division Seiko Epson Corporation
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Kimura M
Department Of Electrical Engineering Kure National College Of Technology
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TSUNEKAWA Yoshifumi
TFT Design Technology Department, SEIKO EPSON Corporation
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Karaki Nobuo
Frontier Device Research Center Seiko Epson Corporation
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Kimura Mutsumi
Ryukoku Univ. Otsu‐shi Jpn
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Okuyama Tomoyuki
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan
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HARADA Kiyoshi
Department of Electronics and Informatics, Ryukoku University
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YASUHARA Tohru
Department of Electronics and Informatics, Ryukoku University
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RANA Vikas
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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Shimoda T
Seiko Epson Corp. Nagano‐ken Jpn
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Shimoda Tatsuya
Technology Platform Research Center Seiko Epson Corporation
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Metselaar Wim
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Yasuhara Tohru
Department Of Electronics And Informatics Ryukoku University
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Beenakker Kees
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Hara Yuji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Okayama University
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Rana Vikas
Delft Institute Of Microelectronics And Submicron Technology (dimes) Delft University Of Technology
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Harada Kiyoshi
Department Of Electronics And Informatics Ryukoku University
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OHSHIMA Hiroyuki
Displays Operations Division, Seiko Epson Corporation
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JIROKU Hiroaki
Technology Platform Research Center, SEIKO EPSON Corporation
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MIYASAKA Mitsutoshi
Technology Platform Research Center, SEIKO EPSON Corporation
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Jiroku Hiroaki
Technology Platform Research Center Seiko Epson Corporation
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Miyasaka Mitsutoshi
Technology Platform Research Center Seiko Epson Corporation
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Ishihara R
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Ohshima Hiroyuki
Displays Operations Division Seiko Epson Corporation
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Hiroshima Y
Technology Platform Research Center Seiko Epson Cooperation
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Abe Daisuke
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwa-gun, Nagano 399-0293, Japan
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Kato Masakazu
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan
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Hara Hiroyuki
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan
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Takenaka Satoshi
Displays Operations Division, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan
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Beenakker Kees
Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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Shima Takehiro
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan
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Utsunomiya Sumio
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan
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Miyazawa Wakao
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan
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Kimura Mutsumi
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan
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He Ming
Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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Hiroshima Yasushi
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwa-gun, Nagano 399-0293, Japan
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Tsunekawa Yoshifumi
TFT Design Technology Department, SEIKO EPSON Corporation, 1010 Fujimi, Suwa-gun, Nagano 399-0295, Japan
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Hara Yuji
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan
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Miyasaka Mitsutoshi
Technology Platform Research Center, SEIKO EPSON Corporation, 281 Fujimi, Suwa-gun, Nagano 399-0293, Japan
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Metselaar Wim
Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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Jiroku Hiroaki
Technology Platform Research Center, SEIKO EPSON Corporation, 281 Fujimi, Suwa-gun, Nagano 399-0293, Japan
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Shimoda Tatsuya
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan
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Shimoda Tatsuya
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwa-gun, Nagano 399-0293, Japan
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Shimoda Tatsuya
Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan
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Kimura Mutsumi
Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan
著作論文
- High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by μ-Czochralski Process(Electronic Displays)
- 表側と裏側の絶縁膜界面にトラップ準位をもつポリシリコン薄膜トランジスタのデバイスシミュレーション(ディスプレイ-IDW'03関連-)
- Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
- Numerical Model of Thin-Film Transistors for Circuit Simulation Using Spline Interpolation with Transformation by y=x + log(x)(Regular Section)
- Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors
- Invited Asynchronous Architecture and Its Impact on Low-Power TFT CPUs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Asynchronous Architecture and Its Impact on Low-Power TFT CPUs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing
- Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
- Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
- Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
- High-Performance Polycrystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process
- Time-Ratio Grayscale and Hopping Scan with Current Uniformization for Thin-Film Transistor Driven Organic Light-Emitting Diode Displays
- Artificial Retina Using Thin-Film Photodiodes and Thin-Film Transistors
- Effects of Capping Layer on Grain Growth with $\mu$-Czochralski Process during Excimer Laser Crystallization
- Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
- High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing
- Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy