Effects of Capping Layer on Grain Growth with $\mu$-Czochralski Process during Excimer Laser Crystallization

概要

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The effects of a SiO2 capping layer (CL) on the excimer laser crystallization of amorphous silicon ($\alpha$-Si) films are investigated during the growth of location-controlled Si grains with a $\mu$-Czochralski (grain filter) process by experiments and numerical simulations. The CL thinner than 400 nm for a 250-nm-thick $\alpha$-Si precursor serves as a heat reservoir and increases the average grain size to 9 μm, while the CL thicker than 400 nm serves as a heat sink and decreases the average grain size. During laser irradiation, the CL stores heat owing to heat conduction. The CL returns a fraction of the heat into a molten pool after the laser irradiation, which results in a moderate temperature gradient of the layers beneath the molten pool. The grains grown from the molten pool increase in size owing to the long solidification duration, as a result of a slow heat extraction rate from the molten pool. While the CL thicker than 400 nm stores more heat during laser irradiation and returns only a small fraction of the heat after the laser irradiation, the grain size decreases.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-01-15