Effects of Capping Layer on Grain Growth with $\mu$-Czochralski Process during Excimer Laser Crystallization
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概要
- 論文の詳細を見る
The effects of a SiO2 capping layer (CL) on the excimer laser crystallization of amorphous silicon ($\alpha$-Si) films are investigated during the growth of location-controlled Si grains with a $\mu$-Czochralski (grain filter) process by experiments and numerical simulations. The CL thinner than 400 nm for a 250-nm-thick $\alpha$-Si precursor serves as a heat reservoir and increases the average grain size to 9 μm, while the CL thicker than 400 nm serves as a heat sink and decreases the average grain size. During laser irradiation, the CL stores heat owing to heat conduction. The CL returns a fraction of the heat into a molten pool after the laser irradiation, which results in a moderate temperature gradient of the layers beneath the molten pool. The grains grown from the molten pool increase in size owing to the long solidification duration, as a result of a slow heat extraction rate from the molten pool. While the CL thicker than 400 nm stores more heat during laser irradiation and returns only a small fraction of the heat after the laser irradiation, the grain size decreases.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
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ISHIHARA Ryoichi
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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HIROSHIMA Yasushi
Technology Platform Research Center, Seiko Epson Cooperation
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INOUE Satoshi
Technology Platform Research Center, Seiko Epson Cooperation
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METSELAAR Wim
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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BEENAKKER Kees
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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Shimoda Tatsuya
Technology Platform Research Center Seiko Epson Corp.
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Beenakker Kees
Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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He Ming
Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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Hiroshima Yasushi
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwa-gun, Nagano 399-0293, Japan
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Metselaar Wim
Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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