Towards the Integration of Carbon Nanotubes as Vias in Monolithic Three-Dimensional Integrated Circuits

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概要

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• Carbon nanotubes (CNT) can be an attractive candidate for vertical interconnects (vias) in three-dimensional integrated circuits due to their excellent thermal and electrical properties. To investigate the electrical resistivity of CNT, test vias were fabricated using both a top-down and bottom-up approach. The measured resistivity for the top-down process of 10 m\Omega cm is among the better values found in literature. Beside this, the ability to grow CNT directly on single-grain thin-film transistors (SG-TFT) was demonstrated. The electrical performance of the SG-TFT was found not to be influenced by the CNT growth.

• 2013-04-25

著者

• ISHIHARA Ryoichi

  Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology

• BEENAKKER Kees

  Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology

• Van Der

  Delft Institute Of Microelectronics And Submicron Technology (dimes) Delft University Of Technology

• Ishihara Ryoichi

  Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, 2628CT, Delft, The Netherlands

• Vollebregt Sten

  Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, 2628CT, Delft, The Netherlands

• Chiaramonti Ann

  Materials Reliability Division, National Institute of Standards and Technology, Boulder, CO 80305, U.S.A.

• van der

  Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, 2628CT, Delft, The Netherlands

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• Towards the Integration of Carbon Nanotubes as Vias in Monolithic Three-Dimensional Integrated Circuits

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