Capping Layer on Thin Si Film for $\mu$-Czochralski Process with Excimer Laser Crystallization
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概要
- 論文の詳細を見る
In this paper, we report the effect of SiO2 capping layer (C/L) on the excimer laser crystallization of an amorphous Si (a-Si) thin film by the $\mu$-Czochralski ($\mu$-CZ) process. With a 50-nm-thick C/L on a 50-nm-thick a-Si film, the diameter of a location-controlled grain increased to 6 μm. Single grain (SG) thin-film transistor (TFT) was fabricated with the C/L SiO2 as a part of the gate oxide. SG TFT with 50-nm-thick Si showed improved characteristics compared to that without the C/L SiO2. A field effect mobility of 340 cm2 V-1 s-1 and a subthreshold slope of 0.18 V/dec were obtained with the 50-nm-thick Si.
- 2006-05-30
著者
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INOUE Satoshi
Seiko Epson Corporation
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ISHIHARA Ryoichi
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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METSELAAR Wim
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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BEENAKKER Kees
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology
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ABE Daisuke
Seiko Epson Corporation, Technology Platform Research Center
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Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
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HIROSHIMA Yasushi
Seiko Epson Corporation, Technology Platform Research Center
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Vikas Rana
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, 17 Feldmannweg, P.O. Box 5053, 2600GB Delft, The Netherlands
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Beenakker Kees
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, 17 Feldmannweg, P.O. Box 5053, 2600GB Delft, The Netherlands
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Ishihara Ryoichi
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, 17 Feldmannweg, P.O. Box 5053, 2600GB Delft, The Netherlands
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Hiroshima Yasushi
Seiko Epson Corporation, Technology Platform Research Center, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 399-0293, Japan
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Metselaar Wim
Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, 17 Feldmannweg, P.O. Box 5053, 2600GB Delft, The Netherlands
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Shimoda Tatsuya
Seiko Epson Corporation, Technology Platform Research Center, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 399-0293, Japan
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