Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing

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概要

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• Structural properties of nickel metal-induced laterally crystallized (Ni-MILC) silicon films are studied in detail mainly using transmission electron microscopy (TEM). Laterally grown crystalline grains can be as large as 17 μm, though the grains consist of small misorientated subgrains and, in addition, some subgrains are divided further into overlapping upper and lower subgrains. The excimer laser annealing (ELA) method definitely improves the Ni-MILC silicon film quality, enlarges the subgrains and removes the overlapping structure. As a result, fairly good polycrystalline silicon (polysilicon) thin film transistors (TFTs) are easily fabricated through a low-temperature process. It is difficult, however, to completely eliminate the subgrains by simply applying the ELA method to Ni-MILC silicon films.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• Shimoda Tatsuya

  Seiko Epson Corp. Nagano Jpn

• PECZ Bela

  Research Institute For Technical Physics and Material Science

• Makihira Kenji

  Kyushu Institute Of Technology Center For Microelectronics Systems

• Stoemenos John

  Aristotle University Of Thessaloniki Department Of Physics

• Miyasaka Mitsutoshi

  Seiko Epson Corporation Base Technology Research Center

• Asano Tanemasa

  Kyushu Inst. Of Technol. Fukuoka Jpn

• Pecz Béla

  Research Institute For Technical Physics and Material Science, PO Box 49, H-1525, Budapest, Hungary

• Stoemenos John

  Aristotle University of Thessaloniki, Department of Physics, 54006 Thessaloniki, Greece

• Makihira Kenji

  Kyushu Institute of Technology, Center for Microelectronics Systems, Kawazu, Iizuka, Fukuoka 820-8502, Japan

• Miyasaka Mitsutoshi

  Seiko Epson Corporation, Technology Platform Research Center, Owa, Suwa, Nagano 392-8502, Japan

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