TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-12-30

著者

• MIYASAKA Mitsutoshi

  Seiko Epson Corporation, Technology Platform Research Center

• Nakazawa T

  Nara Women's Univ. Nara

• NAKAZAWA Takashi

  SEIKO EPSON CORPORATION, TFT Research Laboratory

• YUDASAKA Ichio

  SEIKO EPSON CORPORATION, TFT Research Laboratory

• OHSHIMA Hiroyuki

  SEIKO EPSON CORPORATION, TFT Research Laboratory

• Nakazawa Takashi

  Seiko Epson Corporation Tft Research Laboratory

• Ohshima Hiroyuki

  Seiko Epson Corporation Base Technology Research Center

• Ohshima H

  Seiko Epson Corp. Nagano Jpn

• Yudasaka I

  Seiko Epson Corporation Active Device Research Laboratory

• Yudasaka Ichio

  Seiko Epson Corporation Tft

• Miyasaka M

  Seiko Epson Corp. Nagano Jpn

• Miyasaka Mitsutoshi

  Seiko Epson Corporation Base Technology Research Center

関連論文

• Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
• Comparative Study of Photoluminescence Dynamics of Tris (8-hydroxyquinoline) Aluminum-Based Organic Miltilayer Structures with Different Types of Energy Lineups
• Photoluminescence Dynamics of Aluminumquinoline/Oxadiazole Multilayer Structures
• Optical Properties of Aluminumquinoline-Oxadiazole Codeposited Luminescent Layers
• Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
• Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
• Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
• Oxidation of Amorphous Silicon for Superior Thin Film Transistors
• Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
• Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
• Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
• Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
• Wettability of Silicon Oxide with Poly-Crystalline Silicon
• Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors
• TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
• Electron Transport in Hole-Transport-Type Photoconductive Film
• Anti-Syn Isomerization of Carbazole-3-carbaldehyde Hydrazone Derivative Isolation and Characteristics of Syn Isomer
• Rapid Thermal Annealing Technique for Polycrystalline Silicon Thin-Film Transistors
• Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
• Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors

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