Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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MIYASAKA Mitsutoshi
Seiko Epson Corporation, Technology Platform Research Center
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OHSHIMA Hiroyuki
SEIKO EPSON CORPORATION, TFT Research Laboratory
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Yamaguchi Akemi
Seiko Epson Corporation Analysis Center
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Ohshima H
Seiko Epson Corp. Nagano Jpn
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Itoh Wataru
Seiko Epson Corporation Analysis Center
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KOMATSU Tadakazu
Seiko Epson Corporation, Analysis Center
関連論文
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- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
- Wettability of Silicon Oxide with Poly-Crystalline Silicon
- Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors
- TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors