OHSHIMA Hiroyuki | SEIKO EPSON CORPORATION, TFT Research Laboratory

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概要

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著作論文

Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
Oxidation of Amorphous Silicon for Superior Thin Film Transistors
Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
Wettability of Silicon Oxide with Poly-Crystalline Silicon
Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors
TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)

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