Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• MIYASAKA Mitsutoshi

  Seiko Epson Corporation, Technology Platform Research Center

• OHSHIMA Hiroyuki

  SEIKO EPSON CORPORATION, TFT Research Laboratory

• Yamaguchi Akemi

  Seiko Epson Corporation Analysis Center

• Ohshima Hiroyuki

  Seiko Epson Corporation Base Technology Research Center

• Ohshima H

  Seiko Epson Corp. Nagano Jpn

• Itoh W

  Research Laboratory Taito Co. Ltd.

• Itoh Wataru

  Seiko Epson Corporation Analysis Center

• Itoh Wataru

  Research Laboratory Taito Co.

• Komatsu T

  Hokkaido Univ. Education Hakodate Jpn

• KOMATSU Tadakazu

  Seiko Epson Corporation, Analysis Center

• Miyasaka M

  Seiko Epson Corp. Nagano Jpn

• Miyasaka Mitsutoshi

  Seiko Epson Corporation Base Technology Research Center

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• Oxidation of Amorphous Silicon for Superior Thin Film Transistors
• Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
• Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
• Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
• Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
• Wettability of Silicon Oxide with Poly-Crystalline Silicon
• Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors
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• Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors

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