Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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MIYASAKA Mitsutoshi
Seiko Epson Corporation, Technology Platform Research Center
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YUDASAKA Ichio
SEIKO EPSON CORPORATION, TFT Research Laboratory
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OHSHIMA Hiroyuki
SEIKO EPSON CORPORATION, TFT Research Laboratory
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Ohshima Hiroyuki
Seiko Epson Corporation Base Technology Research Center
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Ohshima H
Seiko Epson Corp. Nagano Jpn
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Komatsu T
Hokkaido Univ. Education Hakodate Jpn
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Yudasaka I
Seiko Epson Corporation Active Device Research Laboratory
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Yudasaka Ichio
Seiko Epson Corporation Tft
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KOMATSU Tadakazu
Seiko Epson Corporation, Analysis Center
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Shimodaira Akemi
Seiko Epson Corporation, Analysis Center
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Miyasaka M
Seiko Epson Corp. Nagano Jpn
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Miyasaka Mitsutoshi
Seiko Epson Corporation Base Technology Research Center
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Shimodaira Akemi
Seiko Epson Corporation Analysis Center
関連論文
- Thin-Film Single-Crystal Growth of BiI_3 by a Hot Wall Technique
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
- Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
- Wettability of Silicon Oxide with Poly-Crystalline Silicon
- Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors
- TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
- Rapid Thermal Annealing Technique for Polycrystalline Silicon Thin-Film Transistors
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors