MIYASAKA Mitsutoshi | Seiko Epson Corporation, Technology Platform Research Center
スポンサーリンク
概要
関連著者
-
MIYASAKA Mitsutoshi
Seiko Epson Corporation, Technology Platform Research Center
-
OHSHIMA Hiroyuki
SEIKO EPSON CORPORATION, TFT Research Laboratory
-
Ohshima Hiroyuki
Seiko Epson Corporation Base Technology Research Center
-
Ohshima H
Seiko Epson Corp. Nagano Jpn
-
Miyasaka Mitsutoshi
Seiko Epson Corporation Base Technology Research Center
-
KOMATSU Tadakazu
Seiko Epson Corporation, Analysis Center
-
Miyasaka M
Seiko Epson Corp. Nagano Jpn
-
Komatsu T
Hokkaido Univ. Education Hakodate Jpn
-
YUDASAKA Ichio
SEIKO EPSON CORPORATION, TFT Research Laboratory
-
Yudasaka I
Seiko Epson Corporation Active Device Research Laboratory
-
Yudasaka Ichio
Seiko Epson Corporation Tft
-
Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
-
Yamaguchi Akemi
Seiko Epson Corporation Analysis Center
-
Itoh W
Research Laboratory Taito Co. Ltd.
-
Itoh Wataru
Seiko Epson Corporation Analysis Center
-
Itoh Wataru
Research Laboratory Taito Co.
-
Shimoda Tatsuya
Seiko Epson Corporation Technology Platform Research Center
-
Asano Tanemasa
Kyushu Univ. Fukuoka‐city Jpn
-
MAKIHIRA Kenji
Kyushu Institute of Technology, Center for Microelectronics Systems
-
PECZ Bela
Research Institute For Technical Physics and Material Science
-
STOEMENOS John
Aristotle University of Thessaloniki, Department of Physics
-
Shimoda Tatsuya
Seiko Epson Corporation Base Technology Research Center
-
Nakazawa T
Nara Women's Univ. Nara
-
NAKAZAWA Takashi
SEIKO EPSON CORPORATION, TFT Research Laboratory
-
Nakazawa Takashi
Seiko Epson Corporation Tft Research Laboratory
-
Asano Tanemasa
Kyushu Institute Of Technology Center For Microelectronics Systems
-
Shimodaira Akemi
Seiko Epson Corporation, Analysis Center
-
ITOH Wataru
MIM Research Laboratory
-
Shimodaira Akemi
Seiko Epson Corporation Analysis Center
著作論文
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
- Wettability of Silicon Oxide with Poly-Crystalline Silicon
- TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)