PECZ Bela | Research Institute For Technical Physics and Material Science
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概要
関連著者
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PECZ Bela
Research Institute For Technical Physics and Material Science
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Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
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Safran Gyorgy
Research Institute For Technical Physics And Materials Science Hungarian Academy Of Sciences
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Shimoda Tatsuya
Seiko Epson Corporation Technology Platform Research Center
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Asano Tanemasa
Kyushu Univ. Fukuoka‐city Jpn
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MIYASAKA Mitsutoshi
Seiko Epson Corporation, Technology Platform Research Center
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MAKIHIRA Kenji
Kyushu Institute of Technology, Center for Microelectronics Systems
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STOEMENOS John
Aristotle University of Thessaloniki, Department of Physics
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Barna Peter
Research Institute For Technical Physics Of The Hungarian Academy Of Science
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八木 栄一
The Institute Of Physical And Chemical Research(riken)
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邱 宏
Department of Applied Physics and Chemistry, The University of Electro-Communications
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橋本 満
Department of Applied Physics and Chemistry, The University of Electro-Communications
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GRANDJEAN Nicolas
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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橋本 満
Department Of Applied Physics And Chemistry
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Asano Tanemasa
Kyushu Institute Of Technology Center For Microelectronics Systems
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邱 宏
Department Of Applied Physics And Chemistry
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Pecz Bela
Research Institute For Technical Physics Of The Hungarian Academy Of Science
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Monemar Bo
Department Of Physics And Measurement Technology Linkoping University
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Makihira Kenji
Kyushu Institute Of Technology Center For Microelectronics Systems
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Stoemenos John
Aristotle University Of Thessaloniki Department Of Physics
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Miyasaka Mitsutoshi
Seiko Epson Corporation Base Technology Research Center
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Asano Tanemasa
Kyushu Inst. Of Technol. Fukuoka Jpn
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Stutzmann Martin
Walter Schottky Institut
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Gonschorek Marcus
Institute Of Quantum Electronics And Photonics Ecole Polytechnique Federale De Lausanne
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Miskys Claudio
Walter Schottky Institut Technische Universitat Munchen
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Kuzmik Jan
Institute Of Electrical Engineering Slovak Academy Of Sciences
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Ostermaier Clemens
Institute of Solid State Electronics and Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria
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Carlin Jean-Francois
Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland
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Schubert Mathias
Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstr. 5, Leipzig 04103, Germany
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Gogova Daniela
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Larsson Henrik
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Kasic Alexander
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Yakimova Rositza
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Pogany Dionyz
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
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Pogany Dionyz
Institute of Solid State Electronics and Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria
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Strasser Gottfried
Institut für Festkörperelektronik, TU-Wien, Floragasse 7, 1040-Wien, Austria
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Strasser Gottfried
Institute of Solid State Electronics and Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria
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Pozzovivo Gianmauro
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
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Basnar Bernhard
Institute of Solid State Electronics and Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria
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Schrenk Werner
Institute of Solid State Electronics and Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria
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Vincze Andrej
International Laser Centre, Ilkovicova 3, 841 04 Bratislava, Slovakia
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Tóth Lajos
Research Institute for Technical Physics and Material Science, H-1525 Budapest, Hungary
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Magnusson Björn
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Magnusson Björn
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Tuomisto Filip
Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, HUT 02015, Finland
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Saarinen Kimmo
Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, HUT 02015, Finland
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Bundesmann Carsten
Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstr. 5, Leipzig 04103, Germany
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Bundesmann Carsten
Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstr. 5, Leipzig 04103, Germany
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Pecz Béla
Research Institute For Technical Physics and Material Science, PO Box 49, H-1525, Budapest, Hungary
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Stoemenos John
Aristotle University of Thessaloniki, Department of Physics, 54006 Thessaloniki, Greece
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Grandjean Nicolas
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Makihira Kenji
Kyushu Institute of Technology, Center for Microelectronics Systems, Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Pozzovivo Gianmauro
Institute of Solid State Electronics and Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria
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Miyasaka Mitsutoshi
Seiko Epson Corporation, Technology Platform Research Center, Owa, Suwa, Nagano 392-8502, Japan
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Kuzmik Jan
Institute of Solid State Electronics and Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria
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Stutzmann Martin
Walter Schottky Institut, Technische Universität München, Am Coulombwall, Garching 85748, Germany
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Miskys Claudio
Walter Schottky Institut, Technische Universität München, Am Coulombwall, Garching 85748, Germany
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Gonschorek Marcus
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
著作論文
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
- RBS Study of the Ni Film and Ni/Si(100) Interface Prepared by Biased dc Sputter-Deposition
- Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
- Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing