Miyasaka Mitsutoshi | Seiko Epson Corporation Base Technology Research Center
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概要
関連著者
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Miyasaka Mitsutoshi
Seiko Epson Corporation Base Technology Research Center
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Ohshima Hiroyuki
Seiko Epson Corporation Base Technology Research Center
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OHSHIMA Hiroyuki
SEIKO EPSON CORPORATION, TFT Research Laboratory
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MIYASAKA Mitsutoshi
Seiko Epson Corporation, Technology Platform Research Center
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Ohshima H
Seiko Epson Corp. Nagano Jpn
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KOMATSU Tadakazu
Seiko Epson Corporation, Analysis Center
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Miyasaka M
Seiko Epson Corp. Nagano Jpn
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Komatsu T
Hokkaido Univ. Education Hakodate Jpn
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Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
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YUDASAKA Ichio
SEIKO EPSON CORPORATION, TFT Research Laboratory
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Itoh Wataru
Seiko Epson Corporation Analysis Center
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Yudasaka I
Seiko Epson Corporation Active Device Research Laboratory
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Yudasaka Ichio
Seiko Epson Corporation Tft
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Yamaguchi Akemi
Seiko Epson Corporation Analysis Center
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Itoh W
Research Laboratory Taito Co. Ltd.
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Itoh Wataru
Research Laboratory Taito Co.
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PECZ Bela
Research Institute For Technical Physics and Material Science
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Shimoda Tatsuya
Seiko Epson Corporation Base Technology Research Center
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Nakazawa T
Nara Women's Univ. Nara
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NAKAZAWA Takashi
SEIKO EPSON CORPORATION, TFT Research Laboratory
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Nakazawa Takashi
Seiko Epson Corporation Tft Research Laboratory
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Makihira Kenji
Kyushu Institute Of Technology Center For Microelectronics Systems
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Stoemenos John
Aristotle University Of Thessaloniki Department Of Physics
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MIYASAKA Seiko
Seiko Epson Corporation, Base Technology Research Center
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Shimodaira Akemi
Seiko Epson Corporation, Analysis Center
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ITOH Wataru
MIM Research Laboratory
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Asano Tanemasa
Kyushu Inst. Of Technol. Fukuoka Jpn
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Miyasaka Seiko
Seiko Epson Corporation Base Technology Research Center
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Shimodaira Akemi
Seiko Epson Corporation Analysis Center
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Pecz Béla
Research Institute For Technical Physics and Material Science, PO Box 49, H-1525, Budapest, Hungary
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Itoh Wataru
Seiko Epson Corporation, Analysis Center, Owa 3-3-5, Suwa, Nagano 392, Japan
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Stoemenos John
Aristotle University of Thessaloniki, Department of Physics, 54006 Thessaloniki, Greece
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Makihira Kenji
Kyushu Institute of Technology, Center for Microelectronics Systems, Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Yamaguchi Akemi
Seiko Epson Corporation, Analysis Center, Owa 3-3-5, Suwa, Nagano 392, Japan
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Miyasaka Mitsutoshi
Seiko Epson Corporation, Active Device Research Laboratory, Owa 3-3-5, Suwa, Nagano 392, Japan
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Miyasaka Mitsutoshi
Seiko Epson Corporation, Technology Platform Research Center, Owa, Suwa, Nagano 392-8502, Japan
著作論文
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
- Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
- Wettability of Silicon Oxide with Poly-Crystalline Silicon
- TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors