Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
The effects of semiconductor thickness on poly-crystalline silicon (poly-Si) thin film transistors (TFTs) are studied. The small value of the threshold voltage (V th) appearing in thin film can improve the electrical properties of the corresponding TFTs. However, thin poly-Si film generally consists of small grains and contains many defects. When the film is extremely thin, it contains voids and it is in a separate island-like state. As a result, the extremely thin film possesses very many traps, which prevent the V th value from further decreasing. The way that thickness affects film quality differs according to how that film was prepared. Therefore, different TFT fabrication methods make the optimum semiconductor thickness different.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Yamaguchi Akemi
Seiko Epson Corporation Analysis Center
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Ohshima Hiroyuki
Seiko Epson Corporation Base Technology Research Center
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Itoh Wataru
Seiko Epson Corporation Analysis Center
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KOMATSU Tadakazu
Seiko Epson Corporation, Analysis Center
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Miyasaka Mitsutoshi
Seiko Epson Corporation Base Technology Research Center
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Itoh Wataru
Seiko Epson Corporation, Analysis Center, Owa 3-3-5, Suwa, Nagano 392, Japan
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Yamaguchi Akemi
Seiko Epson Corporation, Analysis Center, Owa 3-3-5, Suwa, Nagano 392, Japan
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Miyasaka Mitsutoshi
Seiko Epson Corporation, Active Device Research Laboratory, Owa 3-3-5, Suwa, Nagano 392, Japan
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