Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Little Thomas
Seiko Epson Corporation Tft Research Laboratory
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Koike H
Nec Corp. Kanagawa Jpn
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Nakazawa T
Nara Women's Univ. Nara
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TAKAHARA Ken-ichi
SEIKO EPSON CORPORATION, TFT Research Laboratory
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KOIKE Hideki
SEIKO EPSON CORPORATION, TFT Research Laboratory
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NAKAZAWA Takashi
SEIKO EPSON CORPORATION, TFT Research Laboratory
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YUDASAKA Ichio
SEIKO EPSON CORPORATION, TFT Research Laboratory
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OHSHIMA Hiroyuki
SEIKO EPSON CORPORATION, TFT Research Laboratory
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Nakazawa Takashi
Seiko Epson Corporation Tft Research Laboratory
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Ohshima Hiroyuki
Seiko Epson Corporation Base Technology Research Center
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Ohshima H
Seiko Epson Corp. Nagano Jpn
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Koike H
Kawasaki Heavy Ind. Ltd. Chiba Jpn
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Yudasaka I
Seiko Epson Corporation Active Device Research Laboratory
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Yudasaka Ichio
Seiko Epson Corporation Tft
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Takahara Ken-ichi
Seiko Epson Corporation Tft Research Laboratory
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