Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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Koike H
Nec Corp. Kanagawa Jpn
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Kishi H
General R&d Laboratories Taiyo Yuden Co. Ltd.
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Kishi Hiroshi
Taiyo Yuden Co. Ltd.
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Hirai T
Tohoku Univ. Sendai‐shi
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Hirai Toshihiro
Material Development Research Laboratory Nippon Mining Co. Lid.
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Kishi Hiroshi
General R&d Laboratories Toiyo Yuden Co. Ltd.
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Kishi Hiroshi
The School Of Science And Engineering Waseda University
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Hirai Tadahiko
The School of Science and Engineering, Waseda University
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Tarui Yasuo
The School of Science and Engineering, Waseda University
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Hirai T
Canon Inc. Tokyo Jpn
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TARUI Yasuo
National Institute of Advanced Industrial science and Technology
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NAGASHIMA Kazuhito
The School of Science and Engineering, Waseda University
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KOIKE Hiroshi
The School of Science and Engineering, Waseda University
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FUJISAKI Yoshihide
The School of Science and Engineering, Waseda University
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HASE Takashi
Fundamental Research Laboratories, NEC Corporation
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Nagashima K
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Hase Takashi
Fundamental Research Laboratories Nec Corporation
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Fujisaki Y
R&d Association For Future Electron Devices
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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Tarui Yasuo
The School Of Science And Engineering Waseda University
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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