Miyasaka Yoichi | Fundamental Research Laboratories Nec Corporation
スポンサーリンク
概要
関連著者
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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Miyasaka Y
Fundamental Research Laboratories Nec Corporation
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Hase Takashi
Fundamental Research Laboratories Nec Corporation
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SAKUMA Toshiyuki
Fundamental Research Laboratories, NEC Corporation
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HASE Takashi
Fundamental Research Laboratories, NEC Corporation
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Sakuma Toshiyuki
Fundamental Research Laboratories Nec Corporation
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Tokashiki K
Nec Corp. Kanagawa Jpn
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TAKEMURA Koichi
Fundamental Research Laboratories, NEC Corporation
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Sakuma T
Fundamental Research Laboratories Nec Corporation
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Takemura Koichi
Fundamental Research Laboratories Nec Corporation
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Hase T
Nec Corp. Kawasaki Jpn
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Takemura K
Fundamental Research Laboratories Nec Corporation
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Hirata K
Kyushu Inst. Technology Kitakyushu
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Hirata Kazuo
Anelva Co.ltd.
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HOSOKAWA Naokichi
ANELVA CORPORATION
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Yamamichi Shintaro
Functional Materials Research Laboratories Nec Corporation
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Amanuma K
Silicon Systems Research Laboratories Nec Corporation
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AMANUMA Kazushi
Fundamental Research Laboratories, NEC Corporation
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Hosokawa N
Anelva Corp. Tokyo Jpn
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YAMAMICHI Shintaro
Functional Materials Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
Fundamental Research Laboratories, NEC Corporation
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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Yamamichi Shintaro
Fundamental Research Laboratories Nec Corporation
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Iwata N
Nihon Univ. Funabashi‐shi Jpn
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Iwata Naotaka
Kansai Electronics Research Laboratories Nec Corporation
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Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
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NISHIMURA Takeshi
Kansai Electronics Research Laboratories, NEC Corporation
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MATSUBARA Shogo
Fundamental Res. Labs. and VLSI Development Div., NEC Corporation
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Iwata N
Fundamental Research Laboratories Nec Corporation
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Yamaguchi Hiromu
Fundamental Research Laboratories Nec Corporation
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Nishimura T
Nec Corp. Otsu‐shi Jpn
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Matsubara Shogo
Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
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NOGUCHI Takehiro
Fundamental Research Laboratories, NEC Corporation
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Nishimura Takeshi
Kansai Electronics Research Laboratories Nec Corporation
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ISHITANI Akihiko
ULSI Device Development Laboratories, NEC Corporation
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Aoki Hiroaki
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Tomita M
Nit Interdisciplinary Res. Lab. Tokyo Jpn
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Tomita Masato
Ntt Lifestyle And Enviromental Technology Laboratories Ntt Corporation
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AOKI Hidemitsu
Microelectronics Research Labs., NEC Corp.
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IKAWA Eiji
Microelectronics Research Labs., NEC Corp.
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KIKKAWA Takamaro
Microelectronics Research Labs., NEC Corp.
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HASHIMOTO Toshiki
Microelectronics Research Labs, NEC Corp.
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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YOSHIDA Masaji
Fundamental Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
ULSI Device Development Laboratories, NEC Corporation
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YAMAGUCHI Hiromu
Fundamental Research Laboratories, NEC Corporation
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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Koike H
Nec Corp. Kanagawa Jpn
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Kishi H
General R&d Laboratories Taiyo Yuden Co. Ltd.
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Kishi Hiroshi
Taiyo Yuden Co. Ltd.
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Hirai T
Tohoku Univ. Sendai‐shi
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Hirai Toshihiro
Material Development Research Laboratory Nippon Mining Co. Lid.
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TOMITA MASATOSHI
Kansai Environmental Engineering Center Co. (KANSO)
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Kishi Hiroshi
General R&d Laboratories Toiyo Yuden Co. Ltd.
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Kishi Hiroshi
The School Of Science And Engineering Waseda University
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Hirai Tadahiko
The School of Science and Engineering, Waseda University
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Tarui Yasuo
The School of Science and Engineering, Waseda University
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HASHIMOTO Tatsunori
Department of Electronics, Kyushu University
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Kikkawa Takamaro
Microelectronics Research Laboratories Nec Corporation
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Yamamichi Shintaro
Ulsi Device Development Laboratories Nec Corporation
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Hashimoto T
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Aoki H
Tokyo Inst. Technol. Tokyo Jpn
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TAKEUCHI Kiyoshi
Microelectronics Research Laboratories, NEC Corporation
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Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
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Lesaicherre P‐y
Ulsi Device Development Laboratories Nec Corporation
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Ikawa E
Ulsi Device Development Labs. Nec Corporation
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Ikawa Eiji
Microelectronics Research Laboratories Nec Corporation
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Ono Haruhiko
Ulsi Device Development Laboratories Nec Corporation
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Ochi A
Nec Corp. Kawasaki Jpn
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Ochi Atsushi
Fundamental Res. Labs.
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Tomita M
Ntt Lifestyle And Enviromental Technology Laboratories Ntt Corporation
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Tokashiki Ken
Ulsi Device Development Laboratories Nec Corporation
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Hirai T
Canon Inc. Tokyo Jpn
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TARUI Yasuo
National Institute of Advanced Industrial science and Technology
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NAGASHIMA Kazuhito
The School of Science and Engineering, Waseda University
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KOIKE Hiroshi
The School of Science and Engineering, Waseda University
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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FUJISAKI Yoshihide
The School of Science and Engineering, Waseda University
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MORI Toru
Fundamental Research Laboratories, NEC Corporation
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Hoshino Shigeki
Fundamental Research Laboratories Nec Corporation
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Kuzuhara Masaaki
Ulsi Device Development Laboratories Nec Corporation
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BITO Yasunori
Kansai Electronics Research Laboratories, NEC Corporation
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Hashimoto Tadanori
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Shohata Nobuaki
Fundamental Research Laboratories Nec Corporation
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Shohata Nobuaki
Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
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Nagashima K
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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TAKAHASHI Sadayuki
Fundamental Research Laboratories, NEC Corporation
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Ishitani Akihiko
Ulsi Device Development Laboratories Nec Corporation
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YAMAGUCHI Keiko
Kansai Electronics Research Laboratories, NEC Corporation
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CROTEAU Andre
Fundamental Research Laboratories, NEC Corporation
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Miyamoto Hidenobu
Ulsi Device Development Laboratories Nec Corporation
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Fujisaki Y
R&d Association For Future Electron Devices
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Mori Toru
Fundamental Research Laboratories Nec Corporation
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Bito Y
Nec Corp. Otsu‐shi Jpn
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Bito Yasunori
Kansai Electronics Research Laboratories Nec Corporation
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Matsubara Shogo
Fundamental Research Laboratories Nec Corporation
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Yamaguchi Keiko
Kansai Electronics Research Laboratories Nec Corporation
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Croteau Andre
Fundamental Research Laboratories Nec Corporation
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Takahashi Sadayuki
Fundamental Res. Labs. Nec Corporation
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Takahashi Sadayuki
Fundamental Research Laboratories Nec Corporation
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Takeuchi Kiyoshi
Microelectronics Res. Labs. Nec Corporation
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Tarui Yasuo
The School Of Science And Engineering Waseda University
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AOKI Hidemitsu
Microelectronics Research Laboratories, NEC Corporation
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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Hase Takashi
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216-8555, Japan
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Miyasaka Yoichi
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216-8555, Japan
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Noguchi Takehiro
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216-8555, Japan
著作論文
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Study of Submicron SrTiO_3 Patterning
- Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
- Preparation of Pb(Zr, Ti)O_3 Thin Films by Multitarget Sputtering ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Thin Films by Multi-Target Sputtering
- Pb(Zr, Ti)O_3 Thin-Film Preparation by Multitarget Magnetron Sputtering
- RuO_2/TiN-Based Storage Electrodes for (Ba, Sr)TiO_3 Dynamic Random Access Memory Capacitors
- SrTiO_3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties : Thin Films
- ZnO/SiO_2/Si Diaphragm Bulk Acoustic Wave Composite Resonators : Ultrasonic Transduction
- Single 1.5V Operation Power Amplifier MMIC with SrTiO_3 Capacitors for 2.4GHz Wireless Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- SrTiO_3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency
- Ferroelectric Pb(Zr, Ti)O_3 Thin Films Prepared by Metal Target Sputtering : T: Thin Film
- Fatigue Characteristics of Sol-Gel Derived Pb(Zr, Ti)O_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Ferroelectric Properties of Sol-Get Derived Pb(Zr,Ti)O_3 Thin Films
- Reactive Coevaporation Synthesis and Characterization of SrTiO_3 Thin Films : Thin Films
- Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature
- High Dielectric Constant (Ba, Sr)TiO_3 Thin Films for ULSI DRAM Application
- Imprint Characteristics of SrBi2Ta2O9 Thin Films with Modified Sr Composition