SrTiO_3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency
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概要
- 論文の詳細を見る
An RF-sputtered SrTiO_3 (STO) capacitor was fabricated on a GaAs substrate. Microwave characterization exhibited a relative dielectric constant (ε_τ) of 200 up to 20 GHz. This high ε_r was obtained when the base electrode and the STO film were sputter-deposited in succession. A novel Pt/Ti/Pt/Ti base metal exhibited high tolerance against ton-milling, resulting in lower Ohmic resistance compared to the conventional base metal, Pt/Ti.
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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Iwata N
Nihon Univ. Funabashi‐shi Jpn
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Iwata Naotaka
Kansai Electronics Research Laboratories Nec Corporation
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Tokashiki K
Nec Corp. Kanagawa Jpn
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Kuzuhara Masaaki
Ulsi Device Development Laboratories Nec Corporation
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NISHIMURA Takeshi
Kansai Electronics Research Laboratories, NEC Corporation
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TAKEMURA Koichi
Fundamental Research Laboratories, NEC Corporation
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Takemura K
Fundamental Research Laboratories Nec Corporation
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Takemura Koichi
Fundamental Research Laboratories Nec Corporation
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Iwata N
Fundamental Research Laboratories Nec Corporation
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Nishimura T
Nec Corp. Otsu‐shi Jpn
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Miyasaka Y
Fundamental Research Laboratories Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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Nishimura Takeshi
Kansai Electronics Research Laboratories Nec Corporation
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