Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
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概要
- 論文の詳細を見る
This paper describes 950 MHz power performance of double-doped AlGaAs/InGaAs/AlGaAs heterojunction field-effect transistors (HJFET) operated at a drain bias voltage ranging from 2.5 to 3.5 V. The developed 1.0μm gate-length HJFET exhibited a maximum drain current (I_ltmaxgt) of 500 mA/mm, a transconductance (g_m) of 300 mS/mm, and a gate-to-drain breakdown voltage of 11 V. Operated at 3.0 V, a 17.5 mm gate periphery HJFET showed 1.4 W P_ltoutgt and -50.3 dBc adjacent channel leakage power at a 50kHz off-carrier frequency from 950 MHz with 50% PAE. Harmonic balance simulations revealed that the flat g_m characteristics of the HJFET with respect to gate bias voltage are effective to suppress intermodulation distortion under large signal operation. The developed HJFET has great potential for small-sized digital cellular power applications operated at a low DC supply voltage.
- 社団法人電子情報通信学会の論文
- 1995-09-25
著者
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KUZUHARA Masaaki
Photonic and Wireless Devices Research Labs., NEC Corp.
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Iwata N
Nihon Univ. Funabashi‐shi Jpn
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Iwata Naotaka
Kansai Electronics Research Laboratories Nec Corporation
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KUZUHARA Masaaki
Kansai Electronics Laboratories, NEC Corporation
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Kuzuhara M
Photonic And Wireless Devices Research Labs. Nec Corp.
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Iwata N
Fundamental Research Laboratories Nec Corporation
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Inosako Keiko
Kansai Electronics Research Laboratories, NEC Corporation
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Kuzuhara Masaaki
Kansai Electronics Laboratories Nec Corporation
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Inosako Keiko
Kansai Electronics Research Laboratories Nec Corporation
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