High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
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概要
- 論文の詳細を見る
This paper describes high power density and low distortion characteristics of a novel InGaP channel field-modulating plate FET (InGaP FP-FET) under high voltage operation of over 50 V. The developed InGaP FP-FET exhibited an extremely high breakdown voltage of 100 V with an impact ionization coefficient about 10^3 times smaller than that of GaAs. These superior breakdown characteristics indicate that the InGaP FP-FET is one of the most desirable device structures for high-voltage high-power operation. The InGaP FP-FET delivered an output power density of 1.6W/mm at 1.95 GHz operated at a drain bias voltage of 55 V. As power operation moves from class A to class AB, both 3rd-order intermodulation distortion (IM3) and power-added efficiency (PAE) at higher output-power region were improved, resulting from a suppressed gate leakage current near the power saturation point. These results promise that the developed InGaP FP-FET is suited for applications in which both high efficiency and low distortion are required.
- 社団法人電子情報通信学会の論文
- 2002-12-01
著者
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Ota Kazuki
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Wakejima A
Nec Corp. Otsu‐shi Jpn
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KUZUHARA Masaaki
Photonic and Wireless Devices Research Labs., NEC Corp.
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Matsunaga Kohji
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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WAKEJIMA Akio
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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OTA Kazuki
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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MATSUNAGA Kohji
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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Kuzuhara Masaaki
Photonic And Wireless Devices Research Laboratories Nec Corporation
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