High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE) (Special Issue on High-Frequency/speed Devices in the 21st Century)

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概要

• 論文の詳細を見る

• A high gain AlGaAs/InGaAs HJFET has been developed with Embedded gate technology for Microwave and Millimeter-wave IC's using EB lithography (EMMIE). EMMIE consists of a direct SiO_2 opening by two-step dry-etching with a chemically amplified resist mask. 0.14 μm gate patterns delineated on 4-inch wafers exhibited a small deviation of 10 nm in L_g and a V_<th> standard deviation of 55 mV. The optimum distance between the top of the gate and the recess surface (hg) was determined using a two-dimensional device simulator in order to investigate the effect of fringing gate to drain capacitance on the RF gain performance. The fabricated one-stage HJFET MMIC amplifier exhibited extremely high gain performance of 12.4 dB at 76 GHz.

• 社団法人電子情報通信学会の論文
• 1999-11-25

著者

• Wakejima A

  Nec Corp. Otsu‐shi Jpn

• SAMOTO Norihiko

  Photonic and Wireless Devices Research Labs., NEC Corporation

• WAKEJIMA Akio

  Kansai Electronics Research Laboratories, NEC Corporation

• MAKINO Yoichi

  Kansai Electronics Research Laboratories, NEC Corporation

• YAMANOGUCHI Katsumi

  Kansai Electronics Research Laboratories, NEC Corporation

• SAMOTO Norihiko

  Kansai Electronics Research Laboratories, NEC Corporation

• Samoto N

  Kansai Electronics Research Laboratories Nec Corporation

• Makino Y

  Kansai Electronics Research Laboratories Nec Corporation

• Yamanoguchi Katsumi

  Kansai Electronics Research Laboratories Nec Corporation

• Samoto Norihiko

  Kansai Electronics Research Laboratories Nec Corporation

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• High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE) (Special Issue on High-Frequency/speed Devices in the 21st Century)
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