Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams
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概要
- 論文の詳細を見る
50 keV Ar^+ or focused Au^+ were irradiated in a trimethyl aluminum atmosphere to investigate characteristics of ion beam assisted deposition. About 80 nm thick films were deposited at a dose of 1×10^<16>/cm^2. The film composition and its depth dependence was measured by Auger electron spectroscopy. It was found that the film contains oxygen, carbon and aluminum, and the atomic ratio varies across the film depth. The atomic ratio was 0.8(O):1.1(C):1.4(Al) at the surface and was 0.8(O):3.3(C):1(Al) inside. A direct maskless pattern deposition was also done using 50 keV focused ion beams.
- 社団法人応用物理学会の論文
- 1984-05-20
著者
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Namba S
Inst. Physical And Chemical Research Wako
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Namba Susumu
Nagasaki Institute Of Applied Science
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Namba Susumu
Frontier Research Program Riken
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Shimizu R
Osaka Univ. Osaka Jpn
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Shimizu Ryuichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Tamura N
Ritsumeikan Univ. Shiga Jpn
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Takakura Nobuyuki
Department Of Cell Differentiation Institute Of Molecular Embryology And Genetics Kumamoto Universit
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SAMOTO Norihiko
Photonic and Wireless Devices Research Labs., NEC Corporation
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SAMOTO Norihiko
Department of Applied Physics, Faculty of Engineering, Osaka University
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Samoto N
Kansai Electronics Research Laboratories Nec Corporation
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Shimizu Ryuichi
Department Of Applied Physics Faculty Engineering Osaka University
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