Fabrication of Si0_2 Grating Patterns with Vertical Sidewalls by S0R X-Ray Lithography and Reactive Ion-Beam Etching
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概要
- 論文の詳細を見る
SOR X-ray lithography is an effective means of obtaining surface relief structures with submicron line width, vertical sidewalls and large aspect ratios in resist, because it has advantages of high contrast and small beam divergence. Moreover, reactive ion-beam etching realizes a high fidelity pattern transfer from patterns delineated in resist into underlaying substrates. In this paper, it is shown that SiO_2 grating patterns with sharp vertical sidewalls can be fabricated by CHF_3 reactive ion-beam using masks of PMMA grating patterns replicated by SOR X-ray lithography. This result demonstrates that the combination of SOR X-ray lithography and reactive ion-beam etching is an excellent microfabrication technique.
- 社団法人応用物理学会の論文
- 1981-09-05
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Nakamura Takehiro
Faculty Of Engineering Science Osaka University
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Matsui Shinji
Nippon Electric Co. Ltd
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Masuda Noboru
Faculty Of Engineering Science Osaka University
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Aritome H
Research Center For Extreme Materials Faculty Of Engineering Science Osaka University
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Aritome Hiroaki
Faculty Of Engineering Osaka University
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Moriwaki Kazuyuki
Faculty Of Engineering Science Osaka University:(present Address) Electrical Communication Laborator
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MATSUI Shinji
Faculty of Engineering Science, Osaka University
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Moriwaki K
Ntt Applied Electronics Laboratories
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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