Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
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概要
- 論文の詳細を見る
Raman spectra were measured at 300 K to characterize GaAs and AlGaAs layers grown by laser atomic layer epitaxy. The quality of the GaAs patterned layer grown by laser scanning was uniform in spite of the laser intensity profile. The molar fraction of Al in the peripheral region of the AlGaAs layer is affected by the intensity profile of the laser beam.
- 社団法人応用物理学会の論文
- 1990-08-20
著者
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Namba Susumu
The Institute Of Physical And Chemical Research
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MIYOSHI Tadaki
Technical College, Yamaguchi University
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IWAI Sohachi
The Institute of Physical and Chemical Research
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IIMURA Yasufumi
The Institute of Physical and Chemical Research
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AOYAGI Yoshinobu
The Institute of Physical and Chemical Research
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Miyoshi T
Yamaguchi Univ. Yamaguchi Jpn
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Aoyagi Y
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Namba Susumu
Nagasaki Institute Of Applied Science
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Iimura Y
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Iimura Yasufumi
Division Of Electronic And Information Engineering Graduate School Of Technology Tokyo University Of
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Aoyagi Y
The Institute Of Physical And Chemical Research
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Imura Y
Japan Quality Assurance Organization Shizuoka Jpn
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Namba Susumu
Frontier Research Program Riken
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Mochizuki Takayasu
Laboratory Of Advanced Science And Technology For Industry (lasti) University Of Hyogo
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Aoyagi Yoshinobu
Frontier Research Program Riken
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Aoyagi Yoshinobu
The Institute Of Physical And Chemical Research (riken):microelectronics R & D Center Chinese Ac
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Miyoshi Tadaki
Technical Colledge Yamaguchi University
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Miyoshi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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