The Surface Temperature of Metals Heated with Laser
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-02-15
著者
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Kim Pil
The Institute Of Physical And Chemical Research
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Namba Susumu
The Institute Of Physical And Chemical Research
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Ida Ichiro
Electrical Communication Laboratory Ntt
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NAKAYAMA Satosi
Electrical Communication laboratory, NTT
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Nakayama Satosi
Electrical Communication Laboratory Ntt
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- Transient Characteristics of Luminescence from GaAs/Ga_Al_As Multi-Quantum-Well Structure under Resonant Excitation
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Effect of Electric Field on Transient Characteristics of Luminescence from GaAs/Ga_Al_As Multi-Quantum-Well Structure
- Temperature Dependence of Decay Time of Photoluminescence from GaAs/Ga_Al_As Multi Quantum Well Structures
- Transient Characteristics of Photoluminescence from GaAs/Ga_Al_As Single Quantum Well Structure
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Determination of Reaction Constant of Exciton-Exciton Collision by Absorption Measurement