Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation
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概要
- 論文の詳細を見る
It was experimentally confirmed for the first time that Ga focused-ion-beam maskless implantation into n-GaAs is effective to form a submicron high resistance region, even though 850℃ annealing was made after Ga implantation. For conductive layers formed by 30 keV, 5×10^<12>cm^<-2> Si implantation, a critical Ga ion dose for obtaining the high resistance region was found to be about 3×10^<13>cm^<-2>. Estimated resistivity in the high resistance region was around 1×10^4Ωcm with breakdown voltage of about 30 V. Residual radiation damage seems to be one of the main factors in the formation of the high resistance region.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
-
Namba Susumu
The Institute Of Physical And Chemical Research
-
Toyoda Koichi
The Institute Of Physical And Chemical Research
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Shiokawa Takao
The Institute of Physical and Chemical Research
-
Nakamura Kazuo
Microelectronics Research Laboratories, NEC Corporation
-
Nozaki Tadatoshi
Microelectronics Research Laboratories, NEC Corporation
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