Rapid Formation of Arsenic-Doped Layer More Than 1.0 μm Deep in Si Using Two KrF Excimer Lasers
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概要
- 論文の詳細を見る
Sequential irradiation by two KrF excimer lasers (λ=248 nm) has been used to activate arsenic atoms implanted into Si substrates. The 1st laser pulse having 34 ns pulse width followed by the 2nd laser pulse of 23 ns after a time delay was irradiated to the sample. Laser fluences of the 1st laser pulse and the 2nd laser pulse were set at 2.4 J/cm^2 and 0.5 J/cm^2, respectively. The substrate was heated to 700℃. From Rutherford backscattering spectroscopy (RBS) analysis, the depth of the doped layer is confirmed to be 1.0 μm. Severely rippled surface was observed by atomic force microscope (AFM) for the sample irradiated without the 2nd laser pulse, but the surface morphology can be improved by the sequential irradiation of two pulses. For a time delay of 150 ns, the minimum values of X_<min> (4.61%) and sheet resistance (41.43 Ω/□) were obtained.
- 社団法人応用物理学会の論文
- 1995-12-30
著者
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TOYODA Kenji
Graduate School of Engineering Science, Osaka University
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Toyoda Koichi
The Institute of Physical and Chemical Research Wako
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TAKAI Hiroshi
Tokyo Denki University
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Takai H
Tokyo Denki University
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Toyoda K
Science University Of Tokyo
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Tashiro H
Research And Development Center Ricoh Company Ltd.
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Sugioka Koji
The Institute of Physical and Chemical Research (RIKEN)
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JYUMONJI Masayuki
Department of Electrical Engineering, Tokyo Denki University
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JYUMONJI Masayuki
Tokyo Denki University
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Jyumonji M
Department Of Electrical Engineering Tokyo Denki University
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Toyoda Koichi
The Institute Of Physical And Chemical Research
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Tashiro Hideo
Riken
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Sugioka Koji
Laser Technology Lab., RIKEN- Institute of Physical and Chemical Research
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