Computer Simulation of Deeply Doped Layers in Si Using Double-Pulse Excimer Lasers

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概要

• 論文の詳細を見る

• A deeply doped layer in Si with high crystalline quality and a smooth surface can be obtained by sequential irradiation of two KrF excimer lasers (λ = 248 nm). This novel technique, referred to as double-pulse irradiation, involves high-speed diffusion of dopant and recrystallization of the molten layer induced by laser irradiation. At the typical 1st laser fluence of 2.4J/cm^2 and the 2nd laser fluence of 0.5J/cm^2, the numerical simulations of thermal diffusion in the Si substrate during the laser irradiation reveal that the suppression of the surface roughness by the double-pulse irradiation is mainly caused by the re-heating induced by the 2nd pulse. In addition, the simulations also indicated that the average resolidification velocity of the double-pulse irradiation was estimated to be ∼3.7m/s, which was smaller than that of single KrF excimer laser irradiation of 4.8m/s. This result corresponds to the improvement of the crystalline quality of the sample irradiated by double-pulse lasers.

• 社団法人応用物理学会の論文
• 1996-12-30

著者

• JYUMONJI Masayuki

  Tokyo Denki University

関連論文

• Rapid Formation of Arsenic-Doped Layer More Than 1.0 μm Deep in Si Using Two KrF Excimer Lasers
• Computer Simulation of Deeply Doped Layers in Si Using Double-Pulse Excimer Lasers

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