Impurity Evaluations of SiO_2 Films Formed on LiNbO_3 Substrates
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概要
- 論文の詳細を見る
SiO_2 films deposited by sputtering (SP) and vacuum evaporation (VE) techniques are commonly used as buffer layers in LiNbO_3-based devices. The impurity levels in such films are measured as 10^<17> to 10^<22> atoms/cm^3 for H, Li and Nb ions which might affect the electrical properties of the devices. The major differences between the SP and VE films are in the density and the hydrogen contents, which possibly influence the I/V characteristics of the films and leads to different do drift phenomena of LiNbO_3 optical modulators made of such layers.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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TAKAI Hiroshi
Tokyo Denki University
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Nagata Hirotoshi
Central Research Laboratories Sumitomo Osaka Cement Co. Ltd.
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Takahashi Hiroki
Central Research Laboratories, Sumitomo Osaka Cement Co., Ltd.
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Kougo Tamotsu
Machinery and Metallurgy Research Institute of Chiba Prefecture
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