Si Barrier Metal Growth by Hybrid Radical Beam-Pulsed Laser Deposition of TiN
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概要
- 論文の詳細を見る
Hybrid radical beam-pulsed laser deposition(PLD)of titanium nitride(TiN)has been demonstrated for the growth of Si barrier metal. A combination of PLD and nitrogen radical beam has grown high-quality TiN films on Si(100)substrate without silicidation at the interface between the TiN thin film and Si substrate. Additionally, silicidation was suppressed even at growth temperatures up to 900°C. Diffusion barrier characteristics of the grown film were examined by the deposition of aluminum(Al)thin films of about 400nm thickness on the TiN grown films, followed by post-thermal treatment at 500°C for 30min. Scanning electron microscopy(SEM)observation and Rutherford backscattering spectroscopy(RBS)analysis revealed that sharp interfaces of both Al/TiN and TiN/Si were maintained after the thermal treatment, indicating excellent properties of the TiN films as a Si barrier metal.
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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TOYODA Kenji
Graduate School of Engineering Science, Osaka University
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MIDORIKAWA Katsumi
Riken, The Institute of Physical and Chemical Research
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TAKAI Hiroshi
Tokyo Denki University
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Takai H
Tokyo Denki University
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Toyoda K
Science University Of Tokyo
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Tashiro H
Research And Development Center Ricoh Company Ltd.
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Sugioka Koji
Riken The Institute Of Physical And Chemical Research
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OBATA Kotaro
RIKEN(The Institute of Physical and Chemical Research)
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TOYODA Koichi
Science University of Tokyo
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Obata Kotaro
Riken(the Institute Of Physical And Chemical Research):science University Of Tokyo
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Midorikawa Katsumi
Riken(the Institute Of Physical And Chemical Research)
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Midorikawa Katsumi
Riken (the Institute Of Physical And Chemical Research)
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Tashiro Hideo
Riken
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Sugioka Koji
Laser Technology Lab., RIKEN- Institute of Physical and Chemical Research
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