Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Suzuki K

  School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science

• Suzuki Kenji

  Institute For Materials Research Laboratory Tohoku University

• OHKUBO Satoshi

  Fujitsu Laboratories Ltd.

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

• Suzuki K

  Central Research Laboratory Alps Electric Co. Ltd.

• Suzuki Kenshu

  Division Of Public Health Department Of Social Medicine Nihon University School Of Medicine

• AOYAMA Takahiro

  Daihen Co.

• Suzuki K

  Ntt Transmission Systems Laboratories Lightwave Communications Laboratory

• Aoyama T

  Hitachi Ltd. Ibaraki Jpn

• AOYAMA Takayuki

  Fujitsu Laboratories Lid.

• Suzuki K

  Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn

• TASHIRO Hiroko

  Fujitsu Laboratories Ltd.

• TADA Yoko

  Fujitsu Laboratories Ltd.

• HORIUCHI Kei

  Fujitsu Laboratories Ltd.

• Suzuki K

  Department Of Information And Communication Technology Tokai University

• Tada Y

  Fujitsu Laboratories Ltd.

• Horiuchi K

  Fujitsu Laboratories Ltd.

• Horiuchi Kei

  Fujitsu Laboratories

• Ohkubo Shuichi

  Ulsi Technology Laboratory Fujitsu Laboratories Ltd.

• Tashiro H

  Research And Development Center Ricoh Company Ltd.

• Suzuki K

  東京大学大学院農学生命科学研究科獣医病理学研究室

• Tashiro Hideo

  Riken

• Suzuki Kunihiro

  Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

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